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IXTC 62N15P
IXTR 62N15P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
ISOPLUS220 TM (IXTC) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 20 V; I D = 31 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 62 A
14
24
2250
660
185
27
38
S
pF
pF
pF
ns
ns
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
R G = 10 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 31 A
76
35
70
20
38
0.15
1.0
ns
ns
nC
nC
nC
° C/W
° C/W
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
V GS = 0 V
62
A
I SM
V SD
t rr
Q RM
Repetitive
I F = I S , V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
150
2.0
150
1.5
A
V
ns
μ C
Ref: IXYS CO 0177 R0
ISOPLUS247 (IXTR) Outline
Note 1: Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2: Test current I I T = 62 A.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
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